Product Details for Material from Vishay Semiconductors - IRFIBF30GPBF - MOSFET N-Chan 900V 1.9 Amp

IRFIBF30GPBF Vishay Semiconductors MOSFET N-Chan 900V 1.9 Amp

Part Nnumber
IRFIBF30GPBF
Description
MOSFET N-Chan 900V 1.9 Amp
Producer
Vishay Semiconductors
Basic price
3,43 EUR

The product with part number IRFIBF30GPBF (MOSFET N-Chan 900V 1.9 Amp) is from company Vishay Semiconductors and distributed with basic unit price 3,43 EUR. Minimal order quantity is 1 pc, Approx. production time is 13 weeks.


Vishay Product Category: MOSFET RoHS:  Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 1.9 A Vds - Drain-Source Breakdown Voltage: 900 V Rds On - Drain-Source Resistance: 3.7 Ohms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 35 W Mounting Style: Through Hole Package/Case: TO-220-3 Packaging: Tube Channel Mode: Enhancement Configuration: Single Fall Time: 30 ns Minimum Operating Temperature: - 55 C Rise Time: 25 ns Factory Pack Quantity: 1000 Typical Turn-Off Delay Time: 90 ns


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