IRFBE30SPBF Vishay Semiconductors MOSFET N-Chan 800V 4.1 Amp

Part Nnumber
IRFBE30SPBF
Description
MOSFET N-Chan 800V 4.1 Amp
Producer
Vishay Semiconductors
Basic price
2,90 EUR

The product with part number IRFBE30SPBF (MOSFET N-Chan 800V 4.1 Amp) is from company Vishay Semiconductors and distributed with basic unit price 2,90 EUR. Minimal order quantity is 1 pc, Approx. production time is 13 weeks.


Vishay Product Category: MOSFET RoHS:  Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 4.1 A Vds - Drain-Source Breakdown Voltage: 800 V Rds On - Drain-Source Resistance: 3 Ohms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 125 W Mounting Style: SMD/SMT Package/Case: D2PAK-3 Packaging: Tube Channel Mode: Enhancement Configuration: Single Fall Time: 30 ns Minimum Operating Temperature: - 55 C Rise Time: 33 ns Factory Pack Quantity: 1000 Typical Turn-Off Delay Time: 82 ns


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