Product Details for Material from Vishay Semiconductors - SIS468DN-T1-GE3 - MOSFET 80V 19.5mOhm@10V 30A N-Ch MV T-FET

SIS468DN-T1-GE3 Vishay Semiconductors MOSFET 80V 19.5mOhm@10V 30A N-Ch MV T-FET

Part Nnumber
SIS468DN-T1-GE3
Description
MOSFET 80V 19.5mOhm@10V 30A N-Ch MV T-FET
Producer
Vishay Semiconductors
Basic price
1,28 EUR

The product with part number SIS468DN-T1-GE3 (MOSFET 80V 19.5mOhm@10V 30A N-Ch MV T-FET) is from company Vishay Semiconductors and distributed with basic unit price 1,28 EUR. Minimal order quantity is 1 pc, Approx. production time is 19 weeks.


Vishay Product Category: MOSFET RoHS:  Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 30 A Vds - Drain-Source Breakdown Voltage: 80 V Rds On - Drain-Source Resistance: 19.5 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 3 V Qg - Gate Charge: 8.7 nC Pd - Power Dissipation: 52 W Mounting Style: SMD/SMT Package/Case: PowerPAK-1212-8 Packaging: Reel Configuration: Single Series: SISxxxDN Factory Pack Quantity: 3000 Tradename: ThunderFET TrenchFET Part # Aliases: SIS468DN-GE3


Following Parts
504-303Rs50,51 EUR
0 428 42Legrand52,21 EUR
21525Rollei95,46 EUR
21521Rollei76,77 EUR
21553Not Specified38,44 EUR
21549Not Specified26,59 EUR
21571Rollei88,45 EUR

Random Products
05E1PB10ABS015Parker45,78 EUR
9001JT1W29Schneider Automation Inc163,00 EUR
FS12NMI601000T2Intelligent Actuator Inc2333,32 EUR

(keyword SIS468DN-T1-GE3 Vishay Semiconductors MOSFET 80V 19.5mOhm@10V 30A N-Ch MV T-FET)
All Producents | Vishay Semiconductors
© 2015 Industry Server