Product Details for Material from Vishay Semiconductors - SiHG47N60E-E3 - MOSFET 600V 64mOhm@10V 47A N-Ch E-SRS

SiHG47N60E-E3 Vishay Semiconductors MOSFET 600V 64mOhm@10V 47A N-Ch E-SRS

Part Nnumber
SiHG47N60E-E3
Description
MOSFET 600V 64mOhm@10V 47A N-Ch E-SRS
Producer
Vishay Semiconductors
Basic price
8,74 EUR

The product with part number SiHG47N60E-E3 (MOSFET 600V 64mOhm@10V 47A N-Ch E-SRS) is from company Vishay Semiconductors and distributed with basic unit price 8,74 EUR. Minimal order quantity is 1 pc, Approx. production time is 15 weeks.


Vishay Product Category: MOSFET RoHS:  Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 47 A Vds - Drain-Source Breakdown Voltage: 600 V Rds On - Drain-Source Resistance: 64 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Qg - Gate Charge: 147 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 357 W Mounting Style: Through Hole Package/Case: TO-247-3 Packaging: Tube Configuration: Single Forward Transconductance - Min: 6.8 S Minimum Operating Temperature: - 55 C Series: E Factory Pack Quantity: 500 Tradename: E Series


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(keyword SiHG47N60E-E3 Vishay Semiconductors MOSFET 600V 64mOhm@10V 47A N-Ch E-SRS)
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