SIHG22N60E-GE3 Vishay Semiconductors MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
Part Nnumber
SIHG22N60E-GE3
Description
MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
Producer
Vishay Semiconductors
The product with part number SIHG22N60E-GE3 (MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS)
is from company Vishay Semiconductors and distributed with basic unit price 4,00 EUR. Minimal order quantity is 1 pc, Approx. production time is 13 weeks.
Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 21 A Vds - Drain-Source Breakdown Voltage: 600 V Rds On - Drain-Source Resistance: 180 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 86 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 227 W Mounting Style: Through Hole Package/Case: TO-247-3 Packaging: Tube Ciss - Input Capacitance: 1.92 nF Configuration: Single Fall Time: 54 ns Forward Transconductance - Min: 6.4 S Minimum Operating Temperature: - 55 C Rise Time: 68 ns Series: E Factory Pack Quantity: 500 Tradename: E Series Typical Turn-Off Delay Time: 59 ns
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