SI4431CDY-T1-GE3 Vishay Semiconductors MOSFET 30V 9.0A 4.2W 32mohm @ 10V

Part Nnumber
SI4431CDY-T1-GE3
Description
MOSFET 30V 9.0A 4.2W 32mohm @ 10V
Producer
Vishay Semiconductors
Basic price
0,80 EUR

The product with part number SI4431CDY-T1-GE3 (MOSFET 30V 9.0A 4.2W 32mohm @ 10V) is from company Vishay Semiconductors and distributed with basic unit price 0,80 EUR. Minimal order quantity is 1 pc, Approx. production time is 15 weeks.


Vishay Product Category: MOSFET RoHS:  Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 7 A Vds - Drain-Source Breakdown Voltage: - 30 V Rds On - Drain-Source Resistance: 32 mOhms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 2.5 W Mounting Style: SMD/SMT Package/Case: SOIC-Narrow-8 Packaging: Reel Channel Mode: Enhancement Configuration: Single Fall Time: 9 ns, 11 ns Minimum Operating Temperature: - 55 C Rise Time: 13 ns, 89 ns Factory Pack Quantity: 2500 Typical Turn-Off Delay Time: 23 ns, 22 ns Part # Aliases: SI4431CDY-GE3


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