SI2307CDS-T1-GE3 Vishay Semiconductors MOSFET 30V 2.7A 1.8W 88 mohms @ 10V

Part Nnumber
SI2307CDS-T1-GE3
Description
MOSFET 30V 2.7A 1.8W 88 mohms @ 10V
Producer
Vishay Semiconductors
Basic price
0,51 EUR

The product with part number SI2307CDS-T1-GE3 (MOSFET 30V 2.7A 1.8W 88 mohms @ 10V) is from company Vishay Semiconductors and distributed with basic unit price 0,51 EUR. Minimal order quantity is 1 pc, Approx. production time is 13 weeks.


Vishay Product Category: MOSFET RoHS:  Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 2.7 A Vds - Drain-Source Breakdown Voltage: - 30 V Rds On - Drain-Source Resistance: 880 mOhms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.1 W Mounting Style: SMD/SMT Package/Case: SOT-23-3 Packaging: Reel Channel Mode: Enhancement Configuration: Single Fall Time: 40 ns Minimum Operating Temperature: - 55 C Rise Time: 40 ns Series: SI2307CDS Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 20 ns Part # Aliases: SI2307CDS-GE3


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