SIS415DNT-T1-GE3 Vishay Semiconductors MOSFET 20V .004ohm@10V 35A P-Ch G-III

Part Nnumber
SIS415DNT-T1-GE3
Description
MOSFET 20V .004ohm@10V 35A P-Ch G-III
Producer
Vishay Semiconductors
Basic price
0,74 EUR

The product with part number SIS415DNT-T1-GE3 (MOSFET 20V .004ohm@10V 35A P-Ch G-III) is from company Vishay Semiconductors and distributed with basic unit price 0,74 EUR. Minimal order quantity is 1 pc, Approx. production time is 17 weeks.


Vishay Product Category: MOSFET RoHS:  Details Brand: Vishay Semiconductors Id - Continuous Drain Current: - 22.6 A Vds - Drain-Source Breakdown Voltage: - 20 V Rds On - Drain-Source Resistance: 4 mOhms Transistor Polarity: P-Channel Vgs th - Gate-Source Threshold Voltage: - 1.5 V Qg - Gate Charge: 180 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 3.7 W Mounting Style: SMD/SMT Package/Case: PowerPak-1212-8 Packaging: Reel Fall Time: 25 ns Forward Transconductance - Min: 70 S Minimum Operating Temperature: - 55 C Rise Time: 38 ns Series: SISxxxDN Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 82 ns


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